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US 5,085,146 AGranted
Electroexplosive device
AssigneeAuburn University
InventorThomas A. Baginski
Life of this patent
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Abstract
An electroexplosive device utilizing dielectrics and semiconductors of various configurations, which is of compact size, resistant to breakage, extremely reliable, shielded from accidental ignition resulting from stray RF signals and accidental electrostatic discharge, and the firing characteristics of which may be conveniently varied to achieve desired performance objectives.
Claims8
An electroexplosive device comprising:
- a semiconductor having its top and bottom surfaces treated by adding a controlled amount of one or more dopants so that a difference in Fermi levels is established between the surfaces and the inner substrate of the semiconductor;
- and, a means of applying electrical energy across the energy barrier resulting from the difference in said Fermi levels.
An electroexplosive device comprising a semiconductor wafer on the first surface of which has been affixed:
- (i) a dielectric layer which covers said first surface of the wafer, except for an arbitrarily wide border area along at least one edge and except for an arbitrarily wide corridor extending from a point arbitrarily near the center of said wafer to said edge;
- (ii) a p-type dopant diffused into the exposed areas of the said first surface of the wafer in said corridor and along said edge, forming a p-n junction between said dopant and said exposed surfaces of the said wafer;
- and
- (iii) a conducting material deposited in the area of the corridor doped as set forth in (ii) above and on an arbitrarily sized and configured area in or about the center of said wafer;
- and
- on the opposite surface of which wafer a p-type dopant has been diffused into the wafer, upon which a conducting material has been deposited.
3 more elements
An electroexplosive device comprising a semiconductor wafer on the first surface of which:
- (i) an arbitrarily sized and configured area about the center thereof has had a p-type dopant diffused thereon and therein, surrounded by a dielectric material extending to the periphery of said first surface of the wafer;
- and
- (ii) a conductive material has been deposited in the said center area extending also over the said dielectric material except for an arbitrarily wide border about the periphery of said dielectric material;
- and
- on the opposite surface of which wafer a p-type dopant has been diffused into the wafer, upon which a conducting material has been deposited.
2 more elements
Dependencies are inferred from the claim text.