Thin film transistor panel and manufacturing method thereof

A thin film transistor panel comprising:

• a transparent substrate;
• a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions;
• a plurality of thin film transistors, with each being arranged above that part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines;
• a transparent diffusible insulating film on said substrate;
• and
• metal-diffused layers which are transparent and conductive, and which include portions of said transparent diffusible insulating film being located in correspondence to the plurality of thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors.

An active matrix liquid crystal display device having a thin film transistor panel comprising:

• a transparent substrate;
• a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions;
• a plurality of thin film transistors, with each being arranged on a part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines;
• a transparent diffusible insulating film above the substrate and covering said plurality of thin film transistors;
• metal-diffused layers which are transparent and conductive, and which include portions of the transparent diffusible insulating film being located in correspondence to the thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors;
• an opposite substrate which opposes said substrate, with a predetermined gap therebetween;
• at least one opposite electrode formed on that surface of said opposite substrate which opposes said substrate and arranged to face the metal-diffused layers;
• and
• a liquid crystal sealed between said substrate and said opposite substrate and having an optical characteristic which is variable in accordance with an electric field generated between the metal-diffused layer and the at least one opposite electrode.