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US 5,084,438 AGranted
Electronic device substrate using silicon semiconductor substrate
AssigneeNEC Corporation
InventorsShogo Matsubara, Yoichi Miyasaka, Sadahiko Miura
Life of this patent
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Abstract
An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.
Claims10
An electronic device substrate comprising:
- a silicon single-crystal substrate;
- a spinel epitaxial film formed on said singlecrystal substrate;
- and
- an oxide superconductor film formed on said spinel film, said oxide superconductor being represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and containing at least one element of Sr and Ba as Q, and composition ratios falling within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3, and wherein .delta. is a stoichiometric value selected based on the stoichiometric values x, y and z to provide an oxide.
1 more element
Dependencies are inferred from the claim text.