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US 5,084,128 AGranted
Low-temperature synthesis of group III-group V semiconductors
AssigneeE. I. Du Pont de Nemours and Company
InventorRalph T. Baker
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Abstract
This invention relates to a low-temperature process for the preparation of group III-group V semiconducting material. More particularly, in the present process at least one group III compound is reacted with at least one group V compound in an aprotic solvent to form a precursor, which is then heated to form the semiconducting material.
Claims10
A process for the preparation of a group III-group V compound comprising:
- (a) reacting at least one group III compound independently selected from the group consisting of M(ER.sub.2).sub.3 and Al(PR'.sub.2).sub.3, wherein
- M=Ga or In;
- E=P or As;
- R=t-C.sub.4 H.sub.9, CH[Si(CH.sub.3).sub.3 ].sub.2 or Si(CH.sub.3).sub.3,
- R'=i-C.sub.3 H.sub.7, CH.sub.2 C(CH.sub.3).sub.3, CH.sub.2 Si(CH.sub.3).sub.3 or C.sub.6 H.sub.12,
- with at least one group V compound independently selected from EH.sub.3, where E'=P, As, or Sb, in an aprotic solvent to form a precursor;
- and
- (b) heating the precursor to a temperature up to 400.degree. C. sufficient to form a semiconducting group III-group V material.
5 more elements
Dependencies are inferred from the claim text.