Plasma etching reactor
AssigneePlasma Etch
InventorGregory W. DeLarge
Life of this patent
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Abstract
An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.
Claims7
A plasma etching reactor chamber comprising:
- a vacuum chamber including chamber walls with inner surfaces and a door which, when closed, forms an airtight chamber;
- a plurality of conductive electrode plates positioned in a parallel manner within said chamber, said plates alternating being charged plates and ground plates;
- and
- shield means on essentially all of the inner surfaces of said chamber walls, said shield means comprising a dielectric layer having an inwardly facing surface and an outwardly facing surface adjacent said inner surfaces of said chamber walls and a conductive layer affixed adjacent said inwardly facing surface of said dielectric layer.
An improved plasma etching reactor of the type which has a vacuum chamber with chamber walls having inner surfaces, said chamber further including a plurality of conductive plates wherein the improvement comprises:
- electrostatic shield means essentially completely covering and in intimate contact with the inner surfaces of the chamber walls, said electrostatic shield means comprising a dielectric layer adjacent the chamber walls and a conductive layer adjacent the inwardly facing surface of the dielectric layer.
Dependencies are inferred from the claim text.