Multi-sublayer dielectric layers
AssigneeGeneral Electric Company
InventorsHerbert S. Cole, Jr., Yung S. Liu
Life of this patent
Estimating the term…
Abstract
A dielectric layer comprising a plurality of sublayers of alternating composition can provide a reduced dielectric constant while providing the adhesion and laser drilling properties of a higher dielectric constant material. Such multi-sublayer dielectric layers may be formed in situ on a high density interconnect structure or may be laminated thereon after their own formation.
Claims28
A dielectric layer comprising a stack of sublayers, said stack comprising:
- a plurality of first sublayers consisting of a first dielectric composition which is a polyimide;
- a plurality of second sublayers consisting of a second dielectric composition which is a fluorocarbon;
- and
- said first and second sublayers alternating in said stack and being bonded to each other.
A dielectric layer comprising a stack of sublayers, said stack comprising:
- a plurality of first sublayers consisting of a first dielectric composition which is laser ablatable at a given laser frequency;
- a plurality of second sublayers consisting of a second dielectric composition which is not itself laser ablatable at said given laser frequency;
- said first and second sublayers alternating in said stack and being bonded to each other;
- and
- said second sublayers being thin enough that said dielectric layer is laser ablatable at said given laser frequency.
A high density interconnect structure comprising:
- an electronic component having contact pads on a first surface thereof;
- an interconnection structure over said electronic component including a first layer of organic polymer dielectric material disposed on and bonded to said electronic component, said first layer of organic polymer dielectric material having apertures therein disposed in alignment with at least selected ones of said contact pads;
- a first patterned conductive layer disposed on said first dielectric layer and extending into said apertures in said first dielectric layer into ohmic contact with said selected ones of said contact pads;
- and
- said first layer of dielectric material comprising a first stack including:
- a plurality of first sublayers consisting of a first dielectric composition,
- at least one second sublayer consisting of a second dielectric composition, and
- said first and second sublayers alternating in said first stack and being bonded to each other.
A high density interconnect structure comprising:
- an electronic component having contact pads on a first surface thereof;
- an interconnection structure over said electronic component including a first layer of organic polymer dielectric material disposed on and bonded to said electronic component, said first layer of organic polymer dielectric material having apertures therein disposed in alignment with at least selected ones of said contact pads;
- a first patterned conductive layer disposed on said first dielectric layer and extending into said apertures in said first dielectric layer into ohmic contact with said selected ones of said contact pads;
- a second layer of organic polymer dielectric material disposed on and bonded to said first patterned conductive layer and exposed portions of said first layer of dielectric material;
- said second layer of organic polymer dielectric material having apertures therein disposed in alignment with at least selected portions of said first patterned conductive layer;
- a second patterned conductive layer disposed on said second dielectric layer and extending into said apertures in said second dielectric layer into ohmic contact with said selected portions of said first patterned conductive layer;
- and
- at least one of said dielectric layers comprising a stack including:
- a plurality of first sublayers consisting of a first dielectric composition,
- a plurality of second sublayers consisting of a second dielectric composition, and
- said first and second sublayers alternating in said stack and being bonded to each other.
Dependencies are inferred from the claim text.