Method of making a semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• preparing a semiconductor substrate of a first conductivity type;
• forming a first semiconductor layer of the first conductivity type on a surface of the semiconductor substrate;
• forming a second semiconductor layer of a second conductivity type on said first semiconductor layer;
• selectively etching said first and second semiconductor layers to partially expose the surface of said semiconductor substrate;
• forming an insulating film over a surface region from said exposed surface of said semiconductor substrate to a part of a surface of said second semiconductor layer;
• forming a first electrode over said insulating film and another part of the surface of said second semiconductor layer, said first electrode being electronically connected with said second semiconductor layer on said another part, a region of said first electrode on said insulating film on said semiconductor substrate serving as a region to be connected with an external terminal, and being a comb-type electrode structure having grid electrode extensions formed on said second semiconductor layer and said first electrode further including a bar electrode section formed on both said second semiconductor layer and said insulating film;
• and
• forming a second electrode on a back surface of said semiconductor substrate.