Multilayered intermetallic connection for semiconductor devices
AssigneeInternational Business Machines Corporation
InventorsKenneth P. Rodbell, Paul A. Totta, James F. White
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Abstract
A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (<2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.
Claims16
A metallization structure for the interconnection of semiconductor devices on a substrate comprising:
- a) a layer of sputter deposited aluminum-copper of greater than 0.0% and less than 2.0% copper by weight;
- and
- b) an intermetallic layer formed at the surface of said aluminum-copper layer, said intermetallic formed of a sputter-deposited Group IVA metal and aluminum of said aluminum-copper layer.
A method of forming a structure for connecting semiconductor devices on a substrate comprising the steps of:
- a) sputter depositing a first layer of at least one of the Group IVA metals onto said substrate,
- b) sputter depositing onto said layer of the Group IVA metals a layer of aluminum copper of greater than 0.0% and less than 2.0% copper by weight,
- c) sputter depositing a second layer of the same Group IVA metal as in step a, and
- d) annealing the structure to form an intermetallic of the Group IVA metals and aluminum.
Dependencies are inferred from the claim text.