Semiconductor microactuator
AssigneeIC Sensors, Inc.
InventorJohn H. Jerman
Life of this patent
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Abstract
A semiconductor microactuator has a silicon semiconductor substrate having suspension means connected thereto. The suspension means has a first layer of material having a first thermal expansion coefficient and a second layer of material having a second thermal expansion different than the first thermal expansion coefficient and may be a part of a diaphragm or a pair of connecting members. A movable element, which may be a second part of the diaphragm or a boss, is connected to the suspension to be displaced thereby as the temperature of the first and second layers of material is varied. The displacement is solely irrotational with respect to the semiconductor substrate.
Claims13
A semiconductor microactuator, comprising:
- a semiconductor substrate;
- a movable element;
- and
- suspension means coupled to said semiconductor substrate and to said movable element for suspending said movable element from said semiconductor substrate and for constraining displacement of said movable element with respect to said semiconductor substrate solely to irrotational displacements, said suspension means having a first portion having a first thermal coefficient of expansion and a second portion having a second thermal coefficient of expansion different from said first thermal coefficient of expansion for displacing said movable element with respect to said semiconductor substrate when the temperatures of said first portion of said suspension means and said second portion of said suspension means are varied.
A semiconductor microactuator, comprising:
- a semiconductor substrate;
- a pair of connecting bars connected to said semiconductor substrate, each of said connecting bars having a first thermal coefficient of expansion;
- a movable element connected to said connecting bars and suspended therefrom;
- and
- a differential coefficient layer connected to one of said connecting bars and having a second thermal coefficient of expansion differing from that of said first thermal coefficient of expansion to effect displacement of said movable element with respect to said semiconductor substrate as a temperature of said connecting bar having the differential coefficient layer varies.
A semiconductor microactuator valve, comprising:
- a semiconductor substrate;
- a movable element;
- suspension means coupled to said semiconductor substrate and to said movable element for suspending said movable element from said semiconductor substrate and for constraining displacement of said movable element with respect to said semiconductor substrate solely to irrotational displacements, said suspension means having a first layer having a first thermal coefficient of expansion and a second layer having a second thermal coefficient of expansion different from said first thermal coefficient of expansion for displacing said movable element with respect to said semiconductor substrate when the temperatures of said first layer and said second layer are varied;
- and
- a fluid flow control element connected to said movable element.
A semiconductor microactuator optical device, comprising:
- a semiconductor substrate;
- a movable element;
- suspension means coupled to said semiconductor substrate and to said movable element for suspending said movable element from said semiconductor substrate and for constraining displacement of said movable element with respect to said semiconductor substrate solely to irrotational displacements, said suspension means having a first layer having a first thermal coefficient of expansion and a second layer having a second thermal coefficient of expansion different from said first thermal coefficient of expansion for displacing said movable element with respect to said semiconductor substrate when the temperatures of said first layer said second layer are varied;
- and
- an optical element connected to said movable element.
Dependencies are inferred from the claim text.