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US 5,063,113 AGranted
Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof
AssigneeFujitsu Limited
InventorKunihiko Wada
Life of this patent
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Abstract
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.
Claims7
A substrate having a semiconductor-on-insulator structure comprising:
- a base substrate;
- an insulator layer provided on said base substrate;
- an active substrate provided on said insulator layer, said active substrate made of a single crystal semiconductor having gettering sites therein;
- and
- an active layer provided on said active substrate, said active layer made of a single crystal semiconductor substantially free of gettering sites.
2 more elements
Dependencies are inferred from the claim text.