Multilayered device micro etching method and system

A micro etching method to be applied on a multilayered device, comprising the steps of:

• supplying a first optimum reactive gas in an atmosphere provided with a desired portion of a multilayered device so that an upper insulating layer is etched at a first predetermined etching selectivity thereof to a lower conductive layer by chemically-reacting in the atmosphere of said first optimum reactive gas;
• chemical-reactive-etching locally at the first predetermined etching selectivity said upper insulating layer by irradiating a first energy beam to said desired portion of the multilayered device in said atmosphere of said supplied remove said upper insulating layer along a surface shape of the lower conductive layer on said desired portion of the multilayered device;
• detecting a material change from the upper insulating layer to the lower conductive layer at said desired portion;
• supplying second optimum reactive gas in the atmosphere after detecting said material change so that said lower conductive layer is etched at a second predetermined etching selectivity thereof to a lower insulating layer by chemically reacting in the atmosphere of said second optimum reactive gas;
• and
• chemical-reactive-etching locally at said second etching selectivity said lower conductive layer by irradiating a second energy beam to said desired portion of the multilayered device in said atmosphere of said supplied second optimum reactive gas so that an added wiring connection can be provided on a surface of the lower insulating layer by accurately removing said lower conductive layer without leaving said conductive layer along a surface shape of the lower insulating layer at said desired portion of the multilayered device.

A micro etching method to be applied on a multilayered device comprising the steps of:

• supplying a first optimum reactive gas in an atmosphere provided with a desired portion of the multilayered device so that an upper insulating layer is etched at a first predetermined etching selectivity thereof to a lower conductive layer by chemical-reacting in the atmosphere of said first optimum reactive gas;
• chemical-reactive-etching locally at the etching selectivity said upper insulating layer by irradiating a first energy beam to said desired portion of the multilayered device in said atmosphere of said supplied first optimum reactive gas so as to accurately remove said upper insulating layer along the surface shape of the lower conductive layer on said desired portion of the multilayered device;
• detecting a material change from the upper insulating layer to the lower conductive layer at said desired portion;
• gas-changing and supplying a second optimum reactive gas in the atmosphere after detecting said material change so that said lower conductive layer is etched at a second predetermined etching selectivity thereof to a lower insulating layer by chemically reacting in the atmosphere of said second optimum reactive gas;
• and
• chemical-reactive-etching locally at said second predetermined etching selectivity said lower conductive layer by irradiating a second energy beam to said desired portion of the multilayered device in said atmosphere of said supplied second optimum reactive gas so as to remove accurately said lower conductive layer without leaving said conductive layer along the surface shape of the lower insulating layer at said desired portion of the multilayered device.

A micro etching method to be applied on a multilayered device comprising the steps of:

• supplying a first optimum reactive source gas in an ion source so that an upper insulating layer is etched at a predetermined etching selectivity thereof to a lower conductive layer on a desired portion of the multilayered device by chemical ionized reacting by irradiating a first reactive ionized beam extracted from said ion source;
• chemical-reactive-etching locally at the etching selectivity said upper insulating by irradiating the first reactive ionized beam to said desired portion of the multilayered device so as to remove accurately said upper insulating layer along the surface shape of the lower conductive layer at said desired portion of the multilayered device, said first reactive ionized beam being extracted by reacting said first optimum reactive source gas with an electric yield in said ion source;
• detecting a material change from the upper insulating layer to the lower conductive layer on said desired portion;
• gas-changing and supplying a second optimum reactive source gas in the ion source after detecting said material change so that said lower conductive layer is etched at another predetermined etching selectivity thereof to a lower insulating layer by chemical ionized reacting by irradiating a second reactive ionized beam extracted from said ion source;
• and
• chemical-reactive-etching locally at said another etching selectivity said lower conductive layer by irradiating a second reactive ionized beam to said desired portion of the multilayered device so as to accurately remove said lower conductive layer without leaving said conductive layer along the surface shape of the lower insulating layer at said desired portion of the multilayered device, said second reactive ionized beam being extracted by reacting said second optimum reactive source gas with an electric field in said ion source.

A micro etching system for use in association with a multilayered device, comprising:

• first supplying means for supplying first optimum reactive gas in an atmosphere provided with a desired portion of the multilayered device so that an upper insulating layer is etched at a first predetermined etching selectivity thereof to a lower conductive layer by chemical-reacting in the atmosphere of said first optimum reactive gas;
• first chemical reactive etching means for chemical-reactive etching locally at the etching selectivity said upper insulating layer by irradiating a first energy beam to said desired portion of the multilayered device in said atmosphere of said first optimum reactive gas supplied by said first supplying means so as to accurately remove said upper insulating layer along a surface shape of the lower conductive layer on said desired portion of the multilayered device;
• detecting means for detecting a material change from the upper insulating layer to the lower conductive layer at said desired portion being chemical-reactive-etched by said first chemical reactive etching means;
• gas-changing and second supplying means for gas-changing and supplying second optimum reactive gas in the atmosphere in accordance with detecting said material change by said detecting means so that said lower conductive layer is etched at a second predetermined etching selectivity thereof to a lower insulating layer by chemical-reacting in the atmosphere of said second optimum reactive gas;
• and
• second chemical reactive etching means for chemical-reactive etching locally at said second etching selectivity said lower conductive layer by irradiating a second energy beam to said desired portion of the multilayered device in said atmosphere of said second optimum reactive gas switched on and supplied by said gas changing and second supplying means so that an added connection wiring can be provided on a surface of the lower insulating layer by accurately removing said lower conductive layer without leaving said conductive layer along the surface of the lower insulating layer at said desired portion of the multilayered device.

A micro etching system for applying on a multilayered device comprising:

• first supplying means for supplying first optimum reactive gas in an atmosphere provided with a desired portion of the multilayered device so that an upper insulating layer is etched at a first predetermined etching selectivity thereof to a lower conductive layer by chemical-reacting in the atmosphere of said first optimum reactive gas;
• first chemical reactive etching means for chemical-reactive etching at the etching selectivity said upper insulating layer by irradiating a first energy beam to said desired portion of the multilayered device in said atmosphere of said first optimum reactive gas supplied by said first supplying means so as to accurately remove said upper insulating layer along the surface shape of the lower conductive layer on said desired portion of the multilayered device;
• detecting means for detecting a material change from the upper insulating layer to the lower conductive layer at said desired portion being chemical-reactive-etched by said first chemical reactive etching means;
• gas-changing and second supplying means for gas-changing and supplying second optimum reactive gas in the atmosphere in accordance with detecting said material change by said detecting means so that said lower conductive layer is etched at a second predetermined etching selectivity thereof to a lower insulating layer by chemical-reacting in the atmosphere of said second optimum reactive gas;
• and
• second chemical reactive etching means for chemical-reactive etching at said second predetermined etching selectivity said lower conductive layer by irradiating a second energy beam to said desired portion of the multilayered device in said atmosphere of said second optimum reactive gas switched on and supplied by said gas-changing and second supplying means so as to accurately remove said lower conductive layer without leaving said conductive layer along the surface of the lower insulating layer at said desired portion of the multilayered device.

A micro etching system for applying on a multilayered device comprising:

• first supplying means for supplying a first optimum reactive source gas in an ion source so that an upper insulating layer is etched at a first predetermined etching selectivity thereof to a lower conductive layer on a first desired portion of the multilayered device by chemical ionized reacting by irradiating a first reactive ionized beam extracted from said ion source;
• first chemical reactive etching means for chemical-reactive etching locally at the etching selectivity said upper insulating layer by irradiating the first reactive ionized beam to said first desired portion of the multilayered device so as to accurately remove said upper insulating layer along the surface shape of the lower conductive layer at said first desired portion of the multilayered device, said first reactive ionized beam being extracted by reacting said first optimum reactive source gas supplied by said first supplying means with an electric field in said ion source;
• detecting means for detecting a material change from the upper insulating layer to the lower conductive layer on said first desired portion;
• gas-changing and second supplying means for gas-changing and supplying second optimum reactive source gas in the ion source in accordance with detecting said material change by said detecting means so that said lower conductive layer is etched at a second predetermined etching selectivity thereof to a lower insulating layer by chemical ionized reacting by irradiating a second reactive ionized beam extracted from said ion source;
• and
• second chemical reactive etching means for chemical-reactive etching locally at said second etching selectivity said lower conductive layer by irradiating a second reactive ionized beam to said desired portion of the multilayered device so as to accurately remove said lower conductive layer without remaining said conductive layer along the surface shape of the lower insulating layer at said desired portion of the multilayered device, said second reactive ionized beam being extracted by reacting said second optimum reactive source gas switched on and supplied by said gas changing and second supplying means with an electric field source.