Method and means for producing a layered system of semiconductors
AssigneeNukem GmbH
InventorHilmar von Campe
Life of this patent
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Abstract
A method and means for producing a layered semiconductor system are proposed wherein the required semiconductor layers are deposited on a carrier layer (10) through interaction with a melt (42). The carrier layer (10) itself may have a basic layer consisting of glass or quartz, which in turn may be formed from a melt by solidification on a metal melt.
Claims18
A method for producing a layered system of semiconductors for large-area photovoltaic components, with at least one semiconductor layer being applied to a carrier layer when the carrier layer contacts a metal melt containing dissolved semiconductor material having at least one doping substance, the semiconductor material being applied to the carrier layer due to a gradient between the metal melt and the carrier layer, comprising the steps of:
- passing the carrier layer over a surface of the metal melt to apply the semiconductor material to the carrier layer;
- and
- transporting the carrier layer and the semiconductor material applied thereto from the metal melt on a gas cushion to cool the carrier layer and the semiconductor material in a controlled manner.
An apparatus for producing a layered semiconductor system for large-surfaced photovoltaic components, comprising:
- at least one reaction vessel for applying at least one semiconductor layer to a carrier layer, said reaction vessel comprising:
- a bottom portion, disposed beneath a path of the carrier layer, for storing a metal melt and for applying the semiconductor layer to the bottom of said carrier layer;
- and
- a top portion, having heating elements disposed therein, for producing a desired temperature gradient to facilitate the application of the semiconductor layer to the carrier layer;
- and
- means for producing a gas cushion to transport the carrier layer to and from said reaction vessel.
A method for producing a layered system of semiconductors for large-area photovoltaic components, with at least one semiconductor layer being applied to a carrier layer when the carrier layer contacts a metal melt containing dissolved semiconductor material having at least one doping substance, the semiconductor material being applied to the carrier layer due to a gradient between the metal melt and the carrier layer, comprising the steps of:
- transporting the carrier layer on a first gas cushion through a first region;
- heating the carrier layer in a controlled manner in the first region;
- passing the carrier layer over a surface of the metal melt in a second region to apply the semiconductor material to the carrier layer;
- and
- transporting the carrier layer and the semiconductor material applied thereto on a second gas cushion through a third region;
- and
- cooling the carrier layer and the semiconductor material in a controlled manner in the third region.
Dependencies are inferred from the claim text.