Reflection type mask

A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising:

• a reflective portion formed by a multilayered film;
• and
• a non-reflective portion formed on said reflective portion to provide a pattern, wherein said non-reflective portion is made of a material which is effective to absorb soft X-rays or vacuum ultraviolet rays and wherein said absorbing material of said non-reflective portion has a linear expansion coefficient not greater than 5.times.10.sup.-5 deg.sup.-1 and a heat conductivity not less than 0.1 J/cm.s.deg.

A reflection type mask usable in a semiconductor device manufacturing exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material by use of radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising:

• a substrate which is non-reflective to soft X-rays or vacuum ultraviolet rays to be used in the exposure apparatus, wherein said substrate is made of a material having a linear expansion coefficient not greater than 1.times.10.sup.-3 /K and a heat conductivity not less than 20 w/mK;
• and
• a reflective portion comprising a multilayered film being formed on said substrate to provide a pattern.

A reflection type mask usable with an imaging optical system having an optical characteristic and for forming an image of the mask on a workpiece, said mask comprising:

• a substrate comprising a curved surface for complementing the optical characteristic of the imaging optical system, said substrate being non-reflective to radiation energy;
• and
• a pattern formed on the surface of said substrate being provided by a multilayered thin film reflective to the radiation energy.

A reflection type mask, comprising:

• a reflective portion having a multilayered structure in which different materials showing different optical constants with regard to soft X-ray and/or vacuum ultraviolet rays are layered alternately;
• and
• a non-reflective portion formed in said reflective portion to provide a pattern, wherein the regularity of the multilayered structure is destroyed in said non-reflective portion.

A method of manufacturing a reflection type mask, said method comprising the steps of:

• alternately layering different materials showing different optical constants with respect to at least one of soft X-rays and vacuum ultraviolet rays to provide a reflective portion of a multilayered structure;
• and
• destroying the regularity of the multilayered structure of a part of the reflective portion, in accordance with the geometrical configuration of a pattern to be formed on the mask, so as to provide a non-reflective portion.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion comprising a multilayered film formed on the reflecting portion;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5.times.10.sup.-5 /deg and a heat conductivity not less than 0.1 J/cm.s.deg;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a pattern defined by (i) a reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion made of a material effective to absorb radiation, and having a linear expansion coefficient not greater than 5.times.10.sup.-5 /K and a heat conductivity not less than 20 W/mK, wherein the reflecting portion is provided on the non-reflecting portion;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a substrate made of a material effective to absorb radiation, and a pattern formed on the substrate with a multilayered film for reflection of the radiation, the substrate having curved surface effective to compensate for an optical characteristic of an imaging optical system;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a substrate having a curved surface effective to compensate for an optical characteristic of an imaging optical system, and a pattern defined by a reflecting portion formed with a multilayered film effective to reflect radiation and a non-reflecting portion not reflective to radiation;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask and influenced by the imaging optical system, whereby the pattern of the mask is transferred to the wafer.

A method of manufacturing semiconductor devices, comprising the steps of:

• preparing a reflection type mask including a pattern defined by (i) as reflecting portion formed with a multilayered film, and (ii) a non-reflecting portion formed by a portion of the reflecting portion, in which portion regularity of the multilayered film is destroyed;
• and
• irradiating the mask with radiation, and exposing a radiation sensitive material on a semiconductor wafer to radiation reflected by the mask, whereby the pattern of the mask is transferred to the wafer.