Superconductor storage device and memory using superconductor storage devices as memory cells

A storage device comprising:

• information write-in means for generating and annihilating a predetermined magnetic flux in accordance with information to be stored;
• information retaining means for retaining said magnetic flux therein;
• and
• information read-out means for detecting the magnetic flux retained in said information retaining means, said information read-out means including a waveguide placed to be subject to the influence of the magnetic flux retained in said information retaining means for making a material wave having charges incident with a coherency thereof being kept, branching the incident material wave into a plurality of parts and making the material wave parts confluent again.

A storage device comprising:

• a word line;
• a write-in line;
• a first loop of superconductor composed of two branch paths of superconductor connected to said word line so as to allow a current flowing in said word line to be retained in said first loop;
• a weakly coupling portion inserted in one of said two branch paths, said weakly coupling portion being subject to the influence of a magnetic field generated by injection of a current into said write-in line to control the retention of said current in said first loop;
• and
• a second loop of normal conductor provided to be magnetically coupled with said first loop, said second loop including an input path and an output path which allow the application of a voltage to said second loop and two branch paths of normal conductor which make a loop-wise connection between said input path and said output path.

A storage device comprising:

• a first line;
• a second line;
• a first loop of superconductor composed of two branch paths of superconductor connected to said first line so as to allow a current flowing in said first line to be retained in said first loop;
• a weakly coupling portion inserted in each of said two branch paths, said weakly coupling portions being subject to the influence of a magnetic field generated by injection of a current into said second line to control the direction of a current flowing in said first loop in accordance with the direction of said current flowing in said first line;
• and
• a second loop of normal conductor formed to be coupled with a part of a magnetic flux generated by said first loop and to partially extend to the outside of said first loop so as to be magnetically coupled with said second line, said second loop including an input path and an output path which allows the application of a voltage to said second loop and two branch paths of normal conductor which make a loop-wise connection between said input path and said output path.

A storage device comprising:

• a write-in line;
• a superconductor for generating or annihilating an Abrikosov flux quantum in accordance with a magnetic field by said write-in line;
• and
• a loop of normal conductor having a space through which a magnetic flux generated by said Abrikosov flux quantum passes, said loop including an input path and an output path which allow the application of a voltage to said loop and two branch paths which make a loop-wise connection between said input path and said output path.

A memory comprising:

• an array of memory cells arranged in columns and rows;
• a word line for connecting each column of said memory cells;
• and
• a write-in line provided for each row of said memory cells,
• each of said memory cells including:
• a first loop of superconductor composed of two branch paths of superconductor connected to associated word line so as to allow a current flowing in the associated word line to be retained in said first loop;
• a weakly coupling portion inserted in one of said two branch paths, said weakly coupling portion being subject to the influence of a magnetic field generated by the injection of a current into said write-in line to control the retention of said current in said first loop;
• and
• a second loop of normal conductor provided to be magnetically coupled with said first loop, said second loop including an input path and an output path which allow the application of a voltage to said second loop and two branch paths of normal conductor which make a loop-wise connection between said input path and said output path.

A memory comprising:

• an array of memory cells arranged in columns and rows;
• a first line for connecting each column of said memory cells;
• and
• a second line provided for each row of said memory cells,
• each of said memory cells including:
• a first loop of superconductor composed of two branch paths of superconductor connected to associated first line so as to allow a current flowing in the associated first line to be retained in said first loop;
• a weakly coupling portion inserted in each of said two branch paths, said weakly coupling portions being subject to the influence of a magnetic field generated by the injection of a current into said second line to control the retention of a current flowing in said first loop in accordance with the direction of said current flowing in said first loop;
• and
• a second loop of normal conductor formed to be coupled with a part of a magnetic flux generated by said first loop and to partially extend to the outside of said first loop so as to be magnetically coupled with said second line, said second loop including an input path and an output path which allow the application of a voltage to said second loop and two branch paths which make a loop-wise connection between said input path and said output path.

A memory comprising:

• an array of memory cells arranged in columns and rows;
• a first line provided for each row of said memory cells;
• and
• a second line provided for each column of said memory cells,
• each of said memory cells including:
• a superconductor for generating and annihilating an Abrikosov flux quantum in accordance with a magnetic field generated by associated first and second lines;
• and
• a loop of normal conductor having a space through which a magnetic flux generated by said Abrikosov flux quantum passes, said loop including an input path and an output path which allow the application of a voltage to said loop and two branch paths of normal conductor which make a loop-wise connection between said input path and said output path.