Methods of forming ferroelectric thin films
AssigneeSeiko Epson Corporation
InventorKazuhiro Takenaka
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Abstract
A ferroelectric film is deposited that has desired stoichiometric composition by employing one of two methods: One method comprises depositing a ferroelectric film, e.g., PbTiO.sub.3, followed by ion implanting the deposited ferroelectric film with one of the constitutents or elements comprising the film, such as, Pb, Ti or O.sub.2. The other method comprises depositing the film by sputtering employing a sputtering gas medium or atmosphere that includes either O.sub.3 or a gaseous form of Pb, such as Pb(C.sub.2 H.sub.5).sub.4, PbCl.sub.4, and Pb.sub.2 O(OH).sub.2, followed by annealing.
Claims39
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- forming a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer,
- subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous,
- thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds.
- sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer,
- subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous,
- thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds.
- introducing into said system a sputtering gas medium including ozone,
- sputtering a ferroelectric thin film comprising ferroelectric constituents of said compound on said substrate or supporting layer,
- subsequently implanting said ferroelectric film with at least one of said ferroelectric constituents to render said deposited film stoichiometric whereby said ferroelectric film contains the stoichiometric composition of said ferroelectric compound and is rendered amorphous,
- thereafter annealing said ferroelectric film to form a crystalline ferroelectric film.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds,
- introducing into said system a sputtering gas medium,
- sputtering a ferroelectric thin film on said substrate or supporting layer, and
- annealing said ferroelectric film in an atmosphere containing O.sub.3 to achieve stoichiometric composition and to form crystalline ferroelectric material.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds,
- introducing into said system a sputtering gas medium including ozone, and
- sputtering a ferroelectric thin film on said substrate or supporting layer.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds,
- introducing into said system a sputtering gas medium including a vapor medium comprising an alkyl metal organic form, a hydride form or a halide form of Pb, and
- sputtering a ferroelectric thin film on said substrate or supporting layer,
- thereafter annealing said ferroelectric film.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of PbTiO.sub.3, PZT (PbTiO.sub.3 /PbZrO.sub.3), or PLZT (La/PbTiO.sub.3 /PbZrO.sub.3),
- introducing into said system a sputtering gas medium comprising Ar, O.sub.2 and Pb(C.sub.2 H.sub.5).sub.4, PbCl.sub.4, or Pb.sub.2 O(OH).sub.2, and
- sputtering a ferroelectric thin film on said substrate or supporting layer.
A method of depositing a ferroelectric thin film on a substrate or supporting layer to contain a stoichiometric composition of the constituents comprising a ferroelectric compound and comprising the steps of
- providing a sputtering system containing a target having a stoichiometric composition of a ferroelectric compound or combination of ferroelectric compounds,
- introducing into said system a sputtering gas medium comprising Ar and O.sub.2,
- sputtering a ferroelectric film on said substrate or supporting layer, and
- thereafter annealing said ferroelectric film to form a crystalline ferroelectric film in an atmosphere containing reactive O.sub.3 wherein O.sub.3 is a secondary component in said atmosphere, said annealing carried out at a temperature in the range of 500.degree. C. to 900.degree. C.
Dependencies are inferred from the claim text.