Logic device and memory device using ceramic superconducting element

An EQUIVALENCE logic device comprising:

• a substrate;
• a single ceramic superconducting element having magneto-resistive characteristics deposited on said substrate;
• a first electrode located adjacent said ceramic superconducting element for providing a first magnetic field to said ceramic superconducting element when a first electric current is applied therethrough;
• a second electrode located adjacent said ceramic superconducting element for providing a second magnetic field to said ceramic superconducting element when a second electric current is applied therethrough;
• a third electrode located adjacent said ceramic superconducting element for providing a third magnetic field to said ceramic superconducting element when a third electric current is applied therethrough;
• all portions of said first and third electrodes being substantially in the same horizontal plane and substantially parallel to each other and the superconducting element along their lengths;
• whereby when said first magnetic field is present, said ceramic superconducting element is made to establish a magneto-resistive state, when said first and second magnetic fields are present, when said first and third magnetic fields are present, said ceramic superconducting element is made to establish said superconductive state, and when said first, second and third magnetic fields are present, said ceramic superconducting element is made to establish said magneto-resistive state.

A memory device comprising:

• a substrate;
• a ceramic superconducting element having magneto-resistive characteristics deposited on said substrate;
• a first electrode located adjacent said ceramic superconducting element for providing to said ceramic superconducting element a magnetic field, which is greater than a threshold magnetic field, for making said ceramic;
• superconductive element in a magneto-resistive state when an electric current is applied therethrough;
• second electrode having opposite ends connected, respectively, to opposite ends of said ceramic superconducting element to define a closed loop by said ceramic superconducting element and said second electrode;
• said ceramic superconducting element and said first and second electrodes all being located in substantially the same plane.
• whereby when a first current is applied between a first portion of said second electrode adjacent one end of said ceramic superconducting element and a second portion of said second electrode adjacent another end of said ceramic superconducting element, said first current partly flows through said ceramic superconducting element and partly flows through said second electrode, and then, when a second current is applied through said first electrode, said ceramic superconducting element exhibits a magneto-resistive state to permit said first current to mostly flow through said second electrode, and thereafter, when first and second currents are cut off simultaneously, said first current is captured in said closed loop to store data.