Semiconductor photodetector device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsRyo Hattori, Misao Hironaka
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Abstract
A photodetector device includes a stack of a light-absorbing layer, a window layer on a substrate, and a region in the window layer formed by reversing the conductivity type of the window layer extending to the light-absorbing layer. A surface protecting film is disposed on the window layer, with a light receiving area being left uncovered. An electrode makes ohmic contact with the reversed conductivity region and surrounds the light receiving area. A metallic light-blocking film is disposed on the protecting film with an insulating gap therebetween. The inner edge of the light-absorbing film is located in alignment with or inward of the p-n junction between the reversed conductivity type region and the window layer.
Claims12
A semiconductor photodetector device comprising:
- a substrate of a first conductivity type;
- a light-absorbing layer of the first conductivity type disposed on said substrate;
- a window layer of the first conductivity type disposed on said light-absorbing layer opposite said substrate;
- a region of a second conductivity type opposite the first conductivity type disposed in a portion of said window layer extending to said light-absorbing layer and forming a conductivity type junction with said window layer;
- a surface-protecting film disposed directly on and contacting said window layer including an aperture leaving a portion of said second conductivity type region exposed as a light-receiving area;
- a first electrode disposed on said surface-protecting film surrounding said light-receiving area and in ohmic contact with said second conductivity type region;
- a metallic light-blocking film disposed directly on and contacting said surface-protecting film surrounding said first electrode with a gap therebetween electrically insulating said metallic light-blocking film from said first electrode, said metallic light-blocking film having an inner edge at the gap opposite said first electrode;
- and
- a second electrode disposed on said substrate opposite said light-absorbing layer in ohmic contact therewith wherein the inner edge or said metallic light-blocking film is located no farther outward from said light-receiving area than the conductivity type junction between said second conductivity type region and said window layer.
Dependencies are inferred from the claim text.