US 5,038,185 A · Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Abstract

This disclosure pertains to compound semiconductor, such as AlGaAs, surface skimming hetero-transverse junction (HTJ) lasers and improved heterojunction bipolar transistors (L-HBTs). These lasers and transistors are structurally consistent with each other, so they can be fabricated in the same set of epitaxial layers for integrated optoelectronic applications. The surface skimming characteristic of the HTJ lasers provided by this invention enables them to be configured relatively easily, without requiring any epitaxial regrowth, to operate as DFB lasers in axial or surface emitting configurations and to function as harmonic generators. Single and multiple base channel L-HBT transistors, as well as structurally corresponding single and multiple quantum well surface skimming HJT lasers are disclosed.

Claims11

Dependent claims

A multilayer compound semiconductor heterostructure device for the fabrication of lateral heterojunction bipolar transistors and hetero-transverse junction lasers;

said heterostructure including at least one active layer disposed between an upper layer and a lower layer, and means for laterally injecting current into said active layer;
said upper layer having an upper surface that defines an upper extremity of said heterostructure and having a thickness selected to cause lasing within said active layer to produce an optical field of substantial intensity at said upper surface.

Dependencies are inferred from the claim text.

Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Life of this patent

Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors

Life of this patent

Abstract

Claims11