Diamond electric device on silicon
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A diamond electric device is described. The device comprises a diamond film deposited on a semiconductor substrate and an upper electrode. The electrical contact between the diamond film and the electrode is formed only through an intervening silicon semiconductor film which prevents direct contact between the diamond film and the electrode. By this structure, the stability of electric performance is substantially improved.
Claims25
A diamond electric device comprising:
- a semiconductor substrate;
- a diamond film formed on said substrate;
- a semiconductor film formed on said diamond film and an electrode arrangement formed on and making electric contact with said semiconductor film.
An electric device comprising:
- a semiconductor substrate;
- a film comprising diamond crystals, said film being provided on said substrate;
- semiconductor protrusions which are provided on and protrude from the surface of said film;
- and
- impurity regions formed in said film,
- wherein said impurity regions are located between and below said semiconductor protrusions.
An electric device comprising:
- a semiconductor substrate;
- a film comprising diamond crystals, said film being provided on said substrate;
- semiconductor protrusions which are provided on and protrude from the surface of said film;
- alloyed regions formed between said film and said semiconductor protrusions by a reaction therebetween;
- impurity regions formed in said film and between said alloyed regions;
- and
- electrodes provided on some of said semiconductor protrusions,
- wherein current paths are formed from said substrate to said electrodes through said film, said impurity regions, and said alloyed regions.
An electric device comprising:
- a silicon semiconductor substrate;
- a silicon-carbon alloy provided on said silicon substrate;
- a film comprising diamond crystals, said film being provided on said silicon-carbon alloy;
- a silicon semiconductor provided on said film;
- and
- at least one electrode provided on said silicon semiconductor.
An electric device comprising:
- a silicon semiconductor substrate;
- a silicon-carbon alloy provided on said silicon substrate;
- a film comprising diamond crystals, said film being provided on said silicon-carbon alloy;
- a silicon semiconductor provided on said film;
- and
- at least one electrode provided on said silicon carbide semiconductor.
An electric device comprising:
- a film comprising diamond crystals, said film being provided on a semiconductor substrate;
- and
- a silicon semiconductor provided on said film,
- wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor by alloying.
An electric device comprising:
- a film comprising diamond crystals, said film being provided on a silicon semiconductor substrate,
- wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor substrate by alloying.
Dependencies are inferred from the claim text.