Plasma based method for production of superconductive oxide layers

A method for producing a superconductive ternary copper oxide layer containing therein M.sub.1, M.sub.2, Cu and O, which comprises:

• a) atomizing, into a mist, a solution comprising elements M.sub.1, M.sub.2, and Cu constituting said superconductive ternary copper oxide layer, wherein M.sub.1 is selected from the group consisting of Mg, Sr, Ba and Ca;
• and M.sub.2 is selected from the group consisting of La, Y, Yb, Sc, Ce, Pr, Sm, Ho, Er and Tm, said elements being contained in said solution as one or more compounds selected from the group consisting of nitrates, sulfates, chlorides, acetates and alkoxides, such that droplets having a diameter of about 2 to 5 .mu.m are substantially formed,
• b) transporting said atomized mist on a carrier gas into a chemical reaction zone employing a plasma CVD device, and, after chemical reaction in said zone,
• c) depositing a ternary copper oxide layer on a substrate preheated to a temperature of 400.degree.-1000.degree. C. in a desired shape, said substrate being selected from the group consisting of alumina, stainless steel, molybdenum and SrTiO.sub.3, and
• d) heat-treating the deposited ternary copper oxide layer in an oxygen-containing atmosphere at a temperature ranging from 200.degree. C.-1200.degree. C. to form said superconductive ternary copper oxide layer on said substrate.