Thin film transistor and method of manufacturing the same
AssigneeCasio Computer Co., Ltd.
InventorsHaruo Wakai, Nobuyuki Yamamura, Syunichi Sato, Minoru Kanbara
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AssigneeCasio Computer Co., Ltd.
InventorsHaruo Wakai, Nobuyuki Yamamura, Syunichi Sato, Minoru Kanbara
Estimating the term…
A TFT of the present invention includes a transparent insulative substrate, a gate electrode formed on the substrate, a gate insulating film formed on at least the gate electrode, a semiconductor film formed at a position on the gate insulating film corresponding to the gate electrode, source and drain electrodes arranged on the semiconductor film so as to form a channel portion, a transparent insulating film covering the source and drain electrodes and the semiconductor film, and a transparent electrode connected to the source electrode. A through hole is formed in the transparent insulating film above the source electrode. The transparent electrode is formed on a portion of the transparent insulating film except for a portion above the channel portion on the semiconductor film.
A thin film transistor, comprising:
A thin film transistor array for using a liquid crystal display device, comprising:
Dependencies are inferred from the claim text.