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US 5,032,539 AGranted
Method of manufacturing green light emitting diode
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Watanabe, Masahiro Nakajima
Life of this patent
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Abstract
In a method of manufacturing a green diode, an included angle defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region formed on a cleavage surface of a GaP single crystal wafer and a surface of the wafer is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the surface of the GaP single crystal wafer.
Claims8
A method of manufacturing a green diode comprising the steps of:
- selecting a GaP single crystal wafer having light and dark stripes of an oxide region formed on a cleavage surface of said GaP single crystal wafer at an inclination angle which is not more than a predetermined angle, said inclination angle being defined by a line extending along a longitudinal direction of said light and dark stripes and a surface of said GaP single crystal wafer;
- and
- forming a layer by liquid phase epitaxy having a p-n junction on said surface of the GaP single crystal wafer.
Dependencies are inferred from the claim text.