Radiation resistant passivation of silicon solar cells
AssigneeElectric Power Research Institut
InventorsRichard M. Swanson, Jon-Yiew Gan, Peter E. Gruenbaum
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Abstract
The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.
Claims8
A silicon solar cell having improved stability when exposed to concentrated solar radiation, comprising:
- a body of silicon material having a major surface for receiving radiation,
- a plurality of p and n conductivity regions in said body for collecting electrons and holes created by impinging radiation, and
- a passivation layer on said major surface including a first layer of silicon oxide in contact with said body and a polycrystalline silicon layer on said first layer of silicon oxide.
A method of stabilizing a silicon oxide/silicon interface in a silicon solar cell comprising the steps of forming a doped polycrystalline silicon layer on said layer of silicon oxide, and forming a layer of silicon oxide material on the surface of said doped polycrystalline silicon layer.
Dependencies are inferred from the claim text.