Removal of surface contaminants by irradiation from a high-energy source
OwnerAudrey C. Engelsberginventor
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Abstract
A method and apparatus for removing surface contaminants from the surface of a substrate by high-energy irradiation is provided. The invention enables removal of surface contaminants without altering of the substrate's underlying molecular structure. The source of high-energy irradiation may comprise a pulsed laser.
Claims12
A method for removing surface contaminants from the surface of a substrate while preserving the crystal structure of the surface being treated, comprising the steps of:
- constantly flowing a gas across the substrate treatment surface, said gas being inert to the substrate treatment surface;
- and
- irradiating said substrate with high-energy irradiation, said irradiation characterized by an energy density and duration sufficient to release surface contaminants from the substrate treatment surface insufficient to alter the crystal structure of the substrate treatment surface.
A method for removing adsorbed surface contaminants from the surface of a substrate while preserving the crystal structure of the surface being treated, comprising the steps of:
- constantly flowing a gas across the substrate, treatment surface, said gas being inert to the substrate treatment surface;
- and
- irradiating said substrate treatment surface with laser generated irradiation, said irradiation characterized by an energy density and duration sufficient to break bonds between adsorbed surface contaminants and the treatment surface, and insufficient to alter the crystal structure of the substrate treatment surface.
A method for removing chemisorbed molecular contaminants from the surface of a semiconductor substrate while preserving the substrate treatment surface, comprising the steps of:
- constantly flowing a gas across the substrate treatment surface, said gas being inert to the substrate treatment surface;
- and
- irradiating said substrate with a series of laser-generated pulses, said laser pulse series having a duration of at least 6000 pulses wherein each pulse has an energy density in the range of 35 to 75 mJ/cm.sup.2.
A method for removing molecular contaminants from the surface of a semiconductor substrate during production of the semiconductor while preserving the substrate treatment surface, comprising the steps of:
- flowing a gas across the semiconductor substrate treatment surface, said gas being inert to the substrate treatment surface;
- while flowing said gas inert to said substrate treatment surface, irradiating said substrate before deposition of circuitry on the semiconductor substrate treatment surface with laser-generated irradiation, said irradiation characterized by an energy density and duration between that required to release surface contaminants from the substrate treatment surface and that required to alter the crystal structure of the substrate treatment surface;
- depositing a circuitry layer on said semiconductor substrate treatment surface;
- flowing a gas across said deposited layer, said gas being inert to the substrate treatment surface and said deposited layer;
- while flowing said gas inert to said substrate treatment surface and deposited layer, irradiating said substrate treatment surface after deposition of circuitry thereon with laser-generated irradiation, said irradiation characterized by an energy density and duration between that required to release surface contaminants from the substrate treatment surface and that required to alter the crystal structure of the substrate treatment surface.
Dependencies are inferred from the claim text.