Film forming method and film forming device
AssigneesKabushiki Kaisha Toshiba, Tokyo Electron Limited, Tokyo Electron Sagami Limited
InventorsKatsuya Okumura, Takahiko Moriya, Shinji Miyazaki, Yoshio Kumagai, Susumu Tanaka
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Abstract
A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.
Claims6
A film forming method comprising the steps of:
- placing a plurality of objects to be processed in a reaction container;
- supplying an etching gas in said reaction container;
- making said etching gas into a plasma;
- removing a natural oxidization originated film on said objects to be processed under a heating condition by said plasma;
- exhausting said etching gas after stopping supply of said etching gas so as to stop making of said plasma;
- and
- supplying a film forming gas in said reaction container without rendering said reaction container open to air so as to form a film on said objects.
A film forming device for performing a predetermined treatment on a plurality of objects to be processed accommodated in a reaction container using a process gas and a reactive gas, said device comprising:
- a plasma mechanism, provided outside said reaction container, for making said process gas into a plasma;
- and
- a plasma transporting tube for guiding process-gas plasma provided by said plasma mechanism inside said reaction container in a direction parallel to respective surfaces of said objects on which a film is to be formed.
A film forming method comprising the steps of:
- making an etching gas into a plasma by means of a plasma mechanism provided outside a reaction chamber;
- introducing said etching gas made into plasma into a reaction container and removing a surface layer of each of a plurality of objects to be processed by said etching gas made into plasma;
- and
- introducing a reactive gas into said reaction container to form a film on a cleaned surface of said objects to be processed.
Dependencies are inferred from the claim text.