Loading patent…
AssigneeS C Technology, Inc.
InventorRichard N. Savage
Estimating the term…
A method and apparatus to control the plasma environment in a semiconductor or thin-film fabrication chamber. The apparatus and method include a means for measuring an optical emission spectrum of the chemical species in the plasma and a library containing a multiplicity of predefined spectral patterns. A processor automatically correlates the spectrum with the predefined spectral patterns in the library, and yields a correlation value for all the correlations. A subset of the predefined spectral patterns based upon the highest correlation values are selected and used to identify the chemical species and abundances thereof in the plasma. A comparator compares the subset with a target set of plasma species and abundances and a control signal generator generates a control signal in response to the comparison to control the chamber environment. In a preferred embodiment, the control signal controls the plasma environment in the reactor chamber when said subset differs from said target set by a predefined amount.
In a method to control the environment of a plasma chamber containing at least one chemical species during a semiconductor fabrication procedure, comprising the steps of:
In a method to control the environment of a processing chamber containing at least one chemical species comprising the steps of:
In an apparatus to control the plasma environment in a semiconductor fabrication chamber containing at least one chemical species, comprising:
In an apparatus to automate the control of the plasma environment in a semiconductor fabrication chamber containing at least one chemical species using spectroscopy to identify chemical and molecular species to a high degree of accuracy in the chamber, comprising:
Dependencies are inferred from the claim text.