Epitaxial Wurtzite growth structure for semiconductor light-emitting device
AssigneeNippon Telegraph and Telephone Corporation
InventorsTakashi Matsuoka, Toru Sasaki
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Abstract
An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film.
Claims7
An epitaxial growth structure for a semiconductor light-emitting device, comprising:
- a sapphire substrate having a substantially (0110) face (M face);
- and
- a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate.
A semiconductor light-emitting device comprising:
- a sapphire substrate having a substantially (0110) face (M face);
- a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate;
- an insulating film formed on said single crystal film;
- and
- a metal electrode formed on said insulating film.
Dependencies are inferred from the claim text.