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US 5,005,102 AGranted
Multilayer electrodes for integrated circuit capacitors
AssigneeRamtron Corporation
InventorWilliam L. Larson
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AssigneeRamtron Corporation
InventorWilliam L. Larson
Estimating the term…
Disclosed is a multilayer capacitor structure in an integrated circuit, including a first electrode constructed by forming at least one layer over a substrate and forming a plate layer over the previous layer(s). A dielectric layer is formed over this first electrode, and a second electrode is established over the dielectric layer by forming a plate layer over the dielectric layer, and forming at least one additional layer over the plate layer. Each layer may serve one or more functions. Also disclosed is a further embodiment including constructing a first electrode by forming at least one layer on a substrate, forming a plate layer over the previous layer(s), and forming a dielectric layer over the first electrode. The resulting structure is then heated, preferably in an oxygen ambient, to oxidize the lower layer. A second electrode can then be formed over the dielectric layer.
A method for fabricating a multilayer electrode capacitor on an integrated circuit comprising the steps of:
A capacitor for an integrated circuit comprising:
A method for fabricating a capacitor on an integrated circuit including the steps of forming first and second electrodes separated by a dielectric material, wherein one of said electrodes is constructed by (a) forming at least one electrically conductive layer, (b) forming a plate layer on said one layer, and (c) oxidizing said one electrode whereby said at least one layer is oxidized, and wherein said plate layer is adjacent to said dielectric layer, and the other one of said electrodes is constructed by the steps of:
A capacitor for an integrated circuit comprising:
Dependencies are inferred from the claim text.