Read only memory device including a superconductive electrode
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoji Mashiko, Tadashi Nishioka
Life of this patent
Estimating the term…
Abstract
A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.
Claims13
A read only memory device, comprising:
- an array of memory cells, each cell including:
- an active element having an input/output portion;
- a first electrode electrically connected to said input/output portion, said first electrode arranged in an insulating film;
- and
- a second electrode arranged overlapping with said first electrode so as to be geometrically connected to the same at an intersection;
- said insulating film having a hole at a position corresponding to said intersection, said second electrode connected to said first electrode through said hole;
- at least one of said first and second electrodes being formed of a ceramics system high temperature superconductor selectively operating at a superconducting state;
- and
- said at least one of said first and second electrodes formed of the ceramics system high temperature superconductor operating at a non-superconducting state for at least one of said memory cells and having a high resistance region for insulating said first and second electrodes from each other at said intersection corresponding to a prescribed stored data,
- wherein data output from an addressed memory cells is determined by the superconducting or non-superconducting state of the ceramics system superconductor electrode.
A read only memory device, comprising:
- an active element having an input/output portion;
- a first electrode electrically connected to said input/output portion;
- and
- a second electrode arranged overlapping with said first electrode so as to be geometrically connected to the same at an intersection;
- at least one of said first and second electrodes being formed of a ceramics system high temperature superconductor operating at a superconducting state;
- and
- said at least one of said first and second electrodes formed of the ceramics system high temperature superconductor having a high resistance region for insulating said first and second electrodes from each other at said intersection corresponding to a prescribed stored data,
- wherein said high resistance region is formed of a non-superconductive material made by destroying crystal structure of a high temperature superconductor.
A read only memory device comprising:
- a plurality of memory cells,
- each memory cell including a transistor,
- each transistor having an electrode,
- each memory cell associated with a signal line,
- each memory cell further having an intersecting contact between a signal line associated therewith and the electrode of the transistor therein,
- at least one of the intersecting signal line and electrode being formed of a superconductive material at each intersection,
- the superconductive material of at least one intersection operating in a superconductive state,
- the crystal structure of the superconductive material of at least another of the intersections is destroyed, thereby providing a high resistance, non-superconducting, contact at said at least another intersection.
Dependencies are inferred from the claim text.