US 4,990,229 AGranted

High density plasma deposition and etching apparatus

AssigneePlasma & Materials Technologies, Inc.

InventorsGregor Campbell, Robert W. Conn, Tatsuo Shoji

Life of this patent

Estimating the term…

Loading patent…

Abstract

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

A plasma processing apparatus, comprising:

(a) an antenna, the antenna radiating electromagnetic waves, the antenna comprising:
(i) a first current loop, the first current loop residing in a first plane and;
(ii) a second current loop, the second current loop residing in a second plane, the first and second current loops residing in a spaced apart relationship wherein the first plane and the second plane are substantially parallel;
(b) a plasma generation chamber, the plasma generation chamber being proximate to and in electromagnetic communication with the antenna, such that a line perpendicular to the planes of the first and second current loops defines a longitudinal axis of the plasma generation chamber;
(c) a first fluid injector, the first fluid injector introducing a fluid into the plasma generation chamber, thereby permitting the creation of a plasma within the plasma generation chamber;
(d) a magnetic field generator, the magnetic field generator generating a magnetic field;
(e) a process chamber, the plasma being transported to the process chamber by the magnetic field;
(f) a second fluid injector, the second fluid injector introducing a fluid into the process chamber.
(g) a current controller, the current controller controlling the current within the magnetic field generator, thereby controlling plasma shape;
(h) a substrate holder, the substrate holder residing within the process chamber;
(i) an auxiliary radio frequency generator, the auxiliary radio frequency generator adapted for applying radio frequency power to a substrate residing on the substrate holder;
(j) a radio frequency exciter, the radio frequency exciter generating a radio frequency voltage and current;
and
(k) a matching network, the matching network interconnecting the radio frequency exciter and the antenna, thereby promoting the efficient transfer of radio frequency energy from the radio frequency exciter to the antenna.

11 more elements

Abstract

Claims18