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AssigneeAdvanced Semiconductor Materials America, Inc.
InventorsH. Peter W. Hey, William A. Mazak, Ravinder K. Aggarwal, John H. Curtin
Estimating the term…
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
A CVD reactor having at least two stations for processing one wafer at each station, said reactor comprising in combination:
A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination:
A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination:
Dependencies are inferred from the claim text.