Information storage medium
AssigneeKabushiki Kaisha Toshiba
InventorsKideki Ohkawa, Norio Ozawa, Motonari Matsubara
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Abstract
An information storage medium comprises a substrate and a recording layer formed on the substrate containing Te, Ge, C and H. The recording layer is formed by sputtering, with a Ge-Te alloy being used as a target and with a mixed gas of a noble gas and a hydrocarbon being used as a sputtering gas. The hydrocarbon content in the sputtering gas falls within a range of 3 to 35%. The composition of the target is Ge.sub.x Te.sub.100-x (where x is expressed by atomic %, and 5.ltoreq.x.ltoreq.20).
Claims10
An information storage medium comprising:
- a substrate;
- and
- a phase-transformation type recording layer formed on the substrate, the recording layer containing Te, Ge, C and H,
- wherein the recording layer is formed by a sputtering process with a Ge-Te alloy used as a target and with a mixed gas of a rare gas and a hydrocarbon gas used as a sputtering gas, the composition of the target being Ge.sub.x Te.sub.100-x (where x is expressed by atomic %, and 5.ltoreq.x.ltoreq.20), the hydrocarbon content in the sputtering gas falling within a range of 5 to 35%.
A method of manufacturing an information storage medium comprising the steps of:
- introducing a substrate and a target of Ge.sub.x Te.sub.100-x (where x is expressed by atomic % and falls within a range of 5.ltoreq.x.ltoreq.20) into a vessel,
- introducing a mixture of hydrocarbon gas and rare gas into the vessel, the content of the hydrocarbon gas falling within a range of 5 to 35%, and
- sputtering the target to form a phase-transformation type recording layer containing Te, Ge, C and H on the substrate.
Dependencies are inferred from the claim text.