Method for forming a thin layer of superconducting material on a substrate and article produced thereby
AssigneeThomson-CSF
InventorsGerard Creuzet, Alain Friederich
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Abstract
The invention provides a method of forming thin layers of superconducting materials and a superconducting device. In accordance with the invention, such layers are formed by the epitaxial growth, on a substrate, of the different constituent elements by regulating the admission of the different constituents so as to obtain a superconducting layer whose mesh parameter substantially matches that of the substrate. Epitaxying may also be carried out directly from a superconducting material.
Claims11
A method for forming a thin film layer of superconducting materials on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate such that a layer is obtained whose material has a lattic parameter corresponding substantially to a multiple or a sub-multiple of the lattice parameter of the substrate, oxidizing the epitaxially grown layer and covering the oxidized epitaxially grown layer with an oxygen impermeable material, said layer having superconductivity at a high critical temperature.
A method for forming a thin film layer of superconducting material on a substrate, comprising epitaxially growing metal oxides and rare earth oxides or raw unoxidized elements on a substrate, oxidizing the epitaxially grown layer, and depositing an oxygen impermeable material on the oxidized layer.
Dependencies are inferred from the claim text.