High frequency power sensing device
AssigneeLucas Weinschel, Inc.
InventorRobert C. Powell
Life of this patent
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Abstract
The present invention relates to devices utilized for measurement of high frequency and microwave power. More specifically, the present invention relates to apparatus and technique for measurement of power including the construction and configuration of a power-sensing probe for detection of the power level of a high frequency or microwave signal.
Claims7
A device for measurement of or for maintaininq constant electrical power at radio and microwave frequencies comprising,
- a temperature sensitive resistance element,
- a variable source of accurate analog voltages,
- means for generating a digital signal in response to an analog signal,
- means for applying an RF signal across said element,
- means for applying a voltage from said variable source across said element at right angles to said means for applying said RF signal, and
- means for applying the voltage across said element to said means for generating a digital signal.
A device for the measurement of electrical power at radio and microwave frequencies comprising,
- a thermistor,
- a digital-to-analog converter,
- an analog-to-digital converter,
- means for connecting the output voltage of said digital-to-analog converter across said thermistor,
- means for applying the voltage across said thermistor to said analog-to-digital converter, and
- an input transmission line having a center conductor,
- said thermistor connected in series with said center conductor.
The method of measuring RF and microwave power comprising
- applying a direct current through a conductor across a temperature sensitive resistor to minimize reflected power upon application of RF and higher frequencies,
- applying an RF or higher frequency signal to the resistor at right angles to the dc current conductor,
- measuring the voltage across the resistor,
- adjusting the dc current across the resistor to maintain its resistance constant, and
- determining the difference in current and voltage across the resistor from before and then after the application of RF or higher frequency signals as a measure of RF or higher frequency power.
Dependencies are inferred from the claim text.