Liquid crystal display panel having a thin-film transistor array for displaying a high quality picture
AssigneeNEC Corporation
InventorKesao Noguchi
Life of this patent
Estimating the term…
Abstract
An LCD panel includes a plurality of pixel electrodes disposed on an insulating substrate in rows and columns, and a plurality of drain buses and gate buses formed is a space between the pixel electrodes, the drain buses having portions operating as a drain electrode, the gate buses having branches operating as a gate electrode and each of the pixel electrodes having a side portion to form a thin-film transistor with the portion of the drain buses and the branch of the gate buses, the positions of the side portions of the pixel electrodes in the rows being changed in adjacent pixel electrodes and repeated in the rows and the positions of the pixel electrodes in the columns being changed in adjacent pixel electrodes and repeated in the columns.
Claims9
A thin-film transistor array for a liquid crystal display panel comprising:
- an insulating substrate;
- a plurality of pixel electrodes formed on said insulating substrate in two orthogonal directions, said pixel electrodes having source regions;
- a plurality of drain buses formed on said insulating substrate between said pixel electrodes in one of said orthogonal directions, each of said drain buses having a plurality of drain regions;
- a plurality of gate buses formed on said insulating substrate between said pixel electrodes in the other of said orthogonal directions, each of said gate buses having a plurality of branch gate regions;
- and
- a plurality of semiconductor films formed between said gate regions, said source regions and said drain regions to form therewith a plurality of thin-film transistors, of which some transistors extend along each of said gate buses and some transistors extend along each of said drain buses,
- wherein directions of the branch gate regions of the thin-film transistors which are formed along each of said gate buses are repeatedly changed from said one of said orthogonal directions to the other of said orthogonal directions and vice versa and changes being repeated with every first predetermined number of the film transistors formed along said each of said gate buses, and wherein directions of the branch gate regions of the thin-film transistors which are formed along each of said drain buses are repeatedly changed from said one of said orthogonal directions to the other of said orthogonal directions and vice versa and changes being repeated with every second predetermined number of the thin film transistors which are formed along each of said drain buses.
Dependencies are inferred from the claim text.