Method and apparatus for detecting foreign particle
AssigneeHitachi, Ltd.
InventorsToshihiko Yamauchi, Nobuyuki Akiyama
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AssigneeHitachi, Ltd.
InventorsToshihiko Yamauchi, Nobuyuki Akiyama
Estimating the term…
The present invention resides in a method and apparatus for detecting a foreign particle, wherein an ultraviolet light beam is radiated in the form of a spot to a sample having a protective film formed on a circuit pattern or a wiring pattern; the spot and the sample are scanned relative to each other; the ultraviolet light is absorbed by the protective film; diffracted light produced from a foreign particle present on the protective film is condensed by an integrating sphere; the thus-condensed light is sensed by an optoelectro transducer to convert it into an electric signal; and the foreign particle present on the protective film formed on the circuit pattern or the wiring pattern is detected on the basis of the electric signal provided from the optoelectro transducer.
A method for detecting a foreign particle comprising the steps of:
A method for detecting a foreign particle comprising the steps of:
A method for detecting a foreign particle comprising the steps of:
An apparatus for detecting a foreign particle comprising;
An apparatus for detecting a foreign particle comprising:
A method for detecting a foreign particle present on an x-ray exposure mask for the exposure of a semiconductor or the like to a pattern using an x-ray beam, wherein said pattern of said x-ray exposure mask is formed on an organic film having a minimum thickness at which the film absorbs most of a specific wavelength region of light other than the wavelength region of the x-ray beam used for the pattern exposure, and that P-polarization of light having a wavelength in said specific wavelength region is radiated to said organic film at Brewster's angle as an incident angle such that whether scattered light is present is detected in order to detect the foreign particle.
A method for detecting a foreign particle present on an x-ray exposure mask for the exposure of a semiconductor or the like to a pattern using an x-ray beam, wherein a substrate for the pattern of said x-ray exposure mask has as a main constituent a first organic film having a minimum thickness at which the film absorbs most of a specific wavelength region of light other than the wavelength region of the x-ray used for the pattern exposure, that a second organic film similar to the first organic film is formed on said pattern, that said specific wavelength region of light is radiated to the substrate side at a vertical incident angle, while P-polarization of light having a wavelength in said specific wavelength region is radiated to the pattern side at Brewster's angle as an incident angle, and that whether scattered light is present is detected in order to detect the foreign particle.
Dependencies are inferred from the claim text.