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AssigneeCanon Kabushiki Kaisha
InventorsKatsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai, Tsutomu Murakami
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A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer with an n-type semiconductor layer, characterized in that one of said semiconductor layers is a film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, said film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms, and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume, and the other of said semiconductor layers is film represented by the general formula ZnA, where A denotes an oxygen atom, sulfur atom, or selenium atom, or any one of the general formulas ZnTe, ZnSe.sub.1-y Te.sub.y (where 0<y<1), and CdTe.
A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer with an n-type semiconductor layer, characterized in that one of said semiconductor layers is a film composed of zinc atoms, selenium atoms, tellurium atoms, and at least hydrogen atoms, said film containing a p-type or n-type doping agent, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 in terms of number of atoms, containing 1 to 4 atomic% of hydrogen atoms, and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume, and the other of said semiconductor layers is a film represented by the general formula ZnA, where A denotes an oxygen atom, sulfur atom, or selenium atom, or any one of the general formulas ZnTe, ZnSe.sub.1-y Te.sub.y (where 0<y<1), and CdTe.
A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that one of said semiconductor layers is a film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, said film containing a p-type or n-type doping agent, containing 1 to 4 atomic% of hydrogen atoms, and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume, and the other of said semiconductor layers is a film composed of zinc atoms, selenium atoms, tellurium atoms, and at least hydrogen atoms, said film containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 in terms of number of atoms, and also containing crystal grains in a ratio of 65 to 85 vol% per unit volume.
Dependencies are inferred from the claim text.