Semiconductor light-emitting device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsJun'ichi Kinoshita, Motoyasu Morinaga, Hideto Furuyama, Yuzo Hirayama
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Abstract
An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
Claims6
A semiconductor light-emitting device comprising:
- a substrate having a first semiconductor laYer of a first conductivity type;
- a mesa portion having a second semiconductor layer of a second conductivity type provided above said first semiconductor layer;
- an active region, formed between said first and second semiconductor layers, having a predetermined width, consisting of a semiconductor having an energy gap narrower than that of said first and second semiconductor layers, and contributing to emission of light;
- semiconductor regions located at both sides in a widthwise direction of said active region to be contacted with the active region, and having an energy gap wider than that of the active region;
- electrically insulating regions located at both sides in a widthwise direction of said active region, and formed between the first and second semiconductor layers;
- and
- first and second electrodes respectively provided on said substrate and said mesa portion.
A semiconductor light-emitting device comprising:
- a substrate having a first semiconductor layer of a first conductivity type;
- a mesa portion having a second semiconductor layer of a second conductivity type provided above said first semiconductor layer, the first and second semiconductor layers forming spaces therebetween which prevent flow of current between the first and second semiconductor layers;
- an active region formed between said first and second semiconductor layers and between the spaces, the active region having a predetermined width, and comprising a semiconductor having an energy gap narrower than that of said first and second semiconductor layers, and contributing to emission of light;
- semiconductor regions located at both sides in a width direction of said active region and having an energy gap wider than that of the active region, each semiconductor region including an inner surface contacted with the active region, and an outer surface which defines one side of said space;
- and
- first and second electrodes respectively provided on said substrate and said mesa portion.
A semiconductor light-emitting device comprising:
- a substrate having a first semiconductor layer of a first conductivity type;
- a mesa portion having a second semiconductor layer of a second conductivity type provided above said first semiconductor layer, the first and second semiconductor layers forming two material etched spaces therebetween;
- an elongated active region formed between said first and second semiconductor layers and between the material etched spaces, the active region having a predetermined width and comprising a semiconductor having an energy gap narrower than that of said first and second semiconductor layers, and contributing to emission of light;
- two elongated semiconductor regions located at both sides in a width direction of said active region and having an energy gap wider than that of the active region, each semiconductor region including an inner surface contacted with the active region, and an etching stop outer surface which defines one side of said material etched space and prevents the active region from being etched away;
- and
- first and second electrodes respectively provided on said substrate and said mesa portion.
Dependencies are inferred from the claim text.