Production of a thin x-ray amorphous aluminum nitride or aluminum silicon nitride film on a surface
AssigneeBASF SE
InventorHelmut Steininger
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AssigneeBASF SE
InventorHelmut Steininger
Estimating the term…
A thin X-ray amorphous aluminum nitride or aluminum silicon nitride film is produced on a surface by vaporization of aluminum or of aluminum and silicon by reactive sputtering or reactive magnetron sputtering under reduced pressure in a process gas atmosphere, so that a sputter gas results, and deposition of the aluminum nitride or of the aluminum silicon nitride from the sputter gas onto the said surface, resulting in the said thin X-ray amorphous aluminum nitride or aluminum silicon nitride film, by a process in which the said process gas atmosphere consists essentially of nitrogen and argon and one or more further noble gases selected from the group consisting of neon, krypton and xenon, the volume ratio of argon to the further noble gases being from 2:1 to 100:1 and the volume ratio of the further noble gases to nitrogen being from 2:1 to 10:1.
A process for the production of a thin X-ray amorphous aluminum nitride film on a surface, comprising the following steps in the stated order:
A process for the production of a magneto-optical recording element, containing
Dependencies are inferred from the claim text.