Service temperature connector and packaging structure of semiconductor device employing the same

In a packaging structure for a semiconductor device wherein a multilayer print-wired substrate on which the semiconductor device is mounted is connected to a connector, and the connector is then mounted on a printed circuit board;

• a connector comprising:
• a first insulating substrate having a plurality of through-holes and having a first circuit pattern formed on the first insulating substrate;
• female contacts each being formed and fixed around the edge of the through-hole of said first insulating substrate and having an opening, an edge of which extends inwardly of the through-hole of said first insulating substrate, the female contact being electrically connected to the first circuit pattern of said first insulating substrate;
• a male contact disposed in the multilayer print-wired substrate and comprising a second insulating substrate having a second circuit pattern thereon and a plurality of male contact pins fixed to the second insulating substrate and electrically connected to the second circuit pattern, the male contact pins each being located in a position corresponding to each of the openings of said female contacts;
• said female contacts are made of a shape memory alloy and the edge of each of said female contacts is given, prior to insertion of each of the male contact pins, such a shape memory that said female contact is returned to a position to close the opening when said female contact is subjected to a temperature above the finishing temperature of the transformation from martensite to parent phase;
• said male contact is inserted in the opening of said female contact at a temperature not higher than the starting temperature of the transformation from parent phase to martensite of the shape memory alloy of the female contact, whereupon said female contact is maintained at a temperature over the finishing temperature of the transformation from martensite to parent phase of the shape memory alloy;
• said female contacts, of the shape memory alloy, are made of a flat thin film having a thickness of 100.mu.m and are arranged orthogonally to the direction of insertion of said male contact, whereby said female contacts and said male contact are electrically connected and are mechanically joined securely with each other in a service temperature, whereupon the connector is held over the finishing temperature of the transformation from martensite to parent phase in the service temperature.