Optical processing in III-V and II-VI compound semiconductors

In combination, an optical processor integrated with an optoelectronic device, said optical processor including a semi-insulating single crystal of a III-V material and having a 43m crystal symmetry, said single crystal cleaved to form a slab having a front surface and a rear surface separated by side surfaces and oriented such that two input writing beams of electromagnetic radiation generated by one coherent source, incident on opposite surfaces and at least one of which writing beams is encoded with information, and a reading beam of electromagnetic radiation generated by said coherent source, incident on either the same surface as one of said writing beams or on a surface perpendicular thereto, interact within said crystal to produce an output beam of electromagnetic radiation, said output beam having modified information encoded thereon.

An optical processor including a semi-insulating single crystal of a II-VI material and having a 43m crystal symmetry, said single crystal cleaved to form a slab having a front surface and a rear surface separated by side surfaces and oriented such that two input writing beams of electromagnetic radiation generated by one coherent source, incident on opposite surfaces and at least one of which writing beams is encoded with information, and a reading beam of electromagnetic radiation generated by said coherent source, incident on either the same surface as one of said writing beams or on a surface perpendicular thereto, interact within said crystal to produce an output beam of electromagnetic radiation, said output beam having modified information encoded thereon, said writing beams having polarization along the direction and illuminating said single crystal from opposite sides in such a way that a space charge field and a grating effect induced via a photorefractive effect of said crystal are perpendicular to said surface, along the direction.

In combination, an optical processor integrated with an optoelectronic device, said optical processor including a semi-insulating single crystal of a II-VI material and having a 43m crystal symmetry, said single crystal cleaved to form a slab having a front surface and a rear surface separated by side surfaces and oriented such that two input writing beams of electromagnetic radiation generated by one coherent source, incident on opposite surfaces and at least one of which writing beams is encoded with information, and a reading beam of electromagnetic radiation generated by said coherent source, incident on either the same surface as one of said writing beams or on a surface perpendicular thereto, interact within said crystal to produce an output beam of electromagnetic radiation, said output beam having modified information encoded thereon, said writing beams having polarization along the direction and illuminating said single crystal from opposite sides in such a way that a space charge field and a grating effect induced via a photorefractive effect of said crystal are perpendicular to said surface, along the direction.