Particulate semiconductor devices and methods
AssigneeChronar Corp.
InventorMarcus Boehm
Life of this patent
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Abstract
Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky contact applied. The resulting device has sharp diode IV-characteristics, low leakage current, and significant reverse break-down voltages. In the manufacture of efficient and red-enhanced particulate silicon pn-junction solar cells, prediffused particles are used, offering major advantages compared to other techniques, such as where the junction is formed after completion of a particulate layer.
Claims15
A particulate semiconductor device comprising
- a substrate with a metallic layer thereupon;
- a barrier layer between said metallic layer and said substrate;
- a particulate layer of particles upon said metallic layer;
- an alloy of said metallic layer and said particles between said substrate and said particulate layer;
- and
- a further layer upon said particulate layer.
A particulate semiconductor device comprising
- a substrate including a metallic layer;
- a particulate layer of particles upon said substrate;
- an alloy of said metallic layer and said particles between said substrate and said particulate layer;
- and
- a further layer upon said particulate layer;
- wherein each of said particles includes a core and a prediffused layer surrounding said core, and said metallic layer forms an ohmic contact with cores of said particles and a rectifying contact with said said prediffused layer surrounding each core.
Dependencies are inferred from the claim text.