Electron tuned quantum well device
AssigneeInternational Business Machines Corporation
InventorsAlan B. Fowler, Gregory L. Timp
Life of this patent
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Abstract
A quantum well type signal translating device is constructed by providing an appendage in which a reflected wave can be employed to introduce constructive or destructive interference in electron wave conduction at the heterojunction.
Claims1
In a signal translator which includes a single conducting path of given length on the surface of a semiconductor member of layers of Ga.sub.1-x Al.sub.x As on GaAs said member having a heterojunction therein and a potential well containing electrons adjacent said heterojunction, said GaAs being undoped and separated from a substrate by a buffer layer of GaAs doped with Si to 10.sup.17 atom/cm.sup.3 and said Ga.sub.1-x Al.sub.x As being undoped adjacent said heterojunction and having a region at the surface of Ga.sub.0.35 Al.sub.0.65 As doped with Si to 10.sup.17 atoms/cm.sup.3, the improvement comprising a tunable stub having a length dimension (L) of 2000 .ANG. connected to and extending from said path at a location along said given length and gate means having a width dimension (W) of 1000 .ANG. for providing a localized electric field across said heterojunction under a portion of said tunable stub the latter having a length less than the means free path length for the scattering of electrons in said second semiconductor material.
Dependencies are inferred from the claim text.