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US 4,942,279 AGranted
RF induction heating apparatus for floating-zone melting
AssigneeShin-Etsu Handotai Co., Ltd.
InventorYasuhiro Ikeda
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AssigneeShin-Etsu Handotai Co., Ltd.
InventorYasuhiro Ikeda
Estimating the term…
An RF induction heating apparatus for manufacturing single-crystal semiconductors having large diameters using the floating-zone melting process is provided in which a single turn induction heating coil suitable for zone melting and another heating coil suitable for controlling single-crystal growth are concentrically or eccentrically positioned to surround an outer surface of a floating zone in a crystalline semiconductor rod. Either the upper or lower peripheral edge of the outer surface of the single-turn induction heating coil is surrounded by and coupled to a annular collar, while both ends of the collar are arranged opposite each other across a gap. At least one conductive sector plate is affixed to a coil lower surface opposite a region of the semiconductor to be heated, so that even if both ends of the coil are spaced apart from each other due to the presence of a supply tube or the like, any gap between the two ends is shielded by the conductive sector plate(s).
An RF induction heating apparatus arrangement for floating-zone melting a rod-like raw material semiconductor moving relative to said apparatus, said arrangement comprising a rod-like semiconductor, a first single-turn induction heating coil disposed around said rod-like semiconductor for floating-zone melting said rod-like raw material semiconductor, whereby a floating molten zone is established within said first heating coil in said rod-like semiconductor, said floating molten zone having a crystal growth interface at the bottom thereof, a second heating coil arranged below said first heating coil, and RF power source means connected to said first and second heating coils, wherein the inner periphery of said second heating coil is positioned adjacent the periphery of said crystal growth interface formed at the bottom of the floating zone in said rod-like semiconductor.
An RF induction heating apparatus for floating-zone melting a rod-like raw material semiconductor moving relative to said apparatus, said apparatus comprising a first single-urn induction heating coil for floating-zone melting said rod-like raw material semiconductor, and a second heating coil positioned outside the circumferential periphery of said first heating coil and having an inside diameter larger than the inside diameter of said first heating coil and an outside diameter larger than the outside diameter of said first heating coil, said first and second coils being positioned substantially concentrically in substantially the same horizontal plane, and an RF power source connected in parallel to said first and second heating coils.
An RF induction heating apparatus for floating-zone melting a rod-like raw material semiconductor moving relative to said apparatus, said apparatus comprising a first single-turn induction heating coil, a second heating coil positioned outside the circumferential periphery of said first heating coil, said first and second coils being positioned substantially concentrically in substantially the same horizontal plane, an annular flat plate connected to an outer peripheral edge of said first heating coil and extending substantially horizontally therefrom, said flat plate having an outer diameter larger than the inner diameter of said second heating coil, and an RF power source connected to said first and second heating coils.
An RF induction heating apparatus for floating-zone melting a rod-like raw material semiconductor moving relative to said apparatus, said apparatus comprising a first single-turn induction heating coil for floating-zone melting said rod-like raw material semiconductor, a second heating coil positioned on or below the plane of said first heating coil, at least one conductive sector plate affixed to the undersurface of said second heating coil, said conductive sector plate being inclined outwardly and downwardly in a circumferential direction along its outer peripheral edge to improve electromagnetic coupling of said second heating coil with the periphery of a crystal growth interface formed at the bottom of the floating zone in said rod-like semiconductor and an RF power source connected to said first and second heating coils.
Dependencies are inferred from the claim text.