High efficiency high isolation amplifier
AssigneeAvantek, Inc.
InventorErnest D. Landi
Life of this patent
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Abstract
A broadband RF amplifier with high efficiency and high reverse isolation having a common emitter stage connected in a cascode configuration to a common base stage, said cascode driving the common base stage in a push-pull operation with a common collector stage.
Claims11
A broadband amplifier comprising a common emitter stage, a common base stage, a common collector stage, and biasing means, wherein the common emitter stage is connected in a cascode configuration to the common base stage, and the common collector stage is connected to the cascode configuration so as to be driven by the common emitter stage in a push-pull configuration with the common base stage.
A broadband RF amplifier comprising:
- (a) an input terminal;
- (b) a first transistor having base, collector, and emitter;
- (c) a first bypass capacitor connecting the input terminal to the first transistor base;
- (d) a first resistor connecting the first transistor emitter to ground;
- (e) shunt feedback connected from the first transistor collector to the first transistor base, said shunt feedback comprising a second bypass capacitor and a second resistor;
- (f) a second transistor having base, collector, and emitter;
- (g) a third bypass capacitor connecting the second transistor base to ground;
- (h) a third resistor connecting the second transistor emitter to the first transistor collector;
- (i) a third transistor having base, collector, and emitter;
- (j) a fourth bypass capacitor connecting the third transistor collector to ground;
- (k) a fifth bypass capacitor connecting the third transistor base to the first transistor collector;
- (l) a fourth resistor connecting the third transistor emitter to the second transistor collector;
- (m) an output terminal;
- (n) a sixth bypass capacitor connecting the output terminal to the second transistor collector;
- and
- (o) biasing means.
Dependencies are inferred from the claim text.