Manufacturing method for a ceramic capacitor

Abstract

A manufacturing method for a ceramic capacitor superior in breakdown voltage ability, comprising a process of baking opposite electrode on the surface of ceramic dielectric composed mainly of metal oxide and that, simultaneous with or after the above process, of baking in a ring-like shape insulating layers for air cutoff on at least the edges of an electrode. The opposite electrodes are formed by baking on the ceramic dielectric an electrode material composed mainly of metal of oxidization property more intense than that of the metal oxide at the ceramic dielectric material, in which, when the insulating layers on the electrode are baked, parts covered with the insulating layers at the opposite electrodes are cutoff from air, so that the ceramic dielectrics just below the parts are deprived by the opposite electrodes of inner oxygen so as to be intensively reduced and the reduced areas each become a semiconductor to largely decrease an insulating resistance value, thereby relaxing a potential gradient at the edge of the electrode and improving the breakdown voltage ability.

Dependencies are inferred from the claim text.