Method of making high speed semiconductor device having a silicon-on-insulator structure

A method of fabricating a semiconductor device, comprising the steps of:

• (a) forming an insulating layer on a silicon substrate having a (110) surface plane;
• (b) forming openings in the insulating layer to expose portions of the substrate therethrough;
• (c) depositing a silicon layer on the insulating layer and the exposed portions of the substrate;
• (d) dividing the deposited silicon layer into a plurality of first islands which include at least one of the openings and a plurality of second islands which include none of the openings;
• (e) melting and recrystallizing the first and second islands;
• (f) forming a p-channel field effect transistor on the recrystallized first islands;
• and
• (g) forming n-channel field effect transistors on the recrystallized second islands.

A method of fabricating a semiconductor device, comprising the steps of:

• (a) forming an insulating layer on a silicon substrate having first surface plane indices;
• (b) forming an opening in the insulating layer so as
• (c) forming first and second silicon islands on the insulating layer, the first island being connected to the substrate through the opening and the second layer being isolated from the substrate;
• (d) recrystallizing the first island to form the first surface plane indices therein and the second island to form second surface plane indices therein;
• (e) forming a first-type field effect transistor on the recrystallized first island;
• and
• (f) forming a second-type field effect transistor, opposite in polarity from the first-type field effect transistor, on the recrystallized second island.