Aluminum-silicon alloy heatsink for semiconductor devices
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiaki Itoh, Yusuke Odani, Kiyoaki Akechi, Nobuhito Kuroishi
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Abstract
A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.
Claims12
A package comprising:
- a substrate made of a ceramic material;
- at least one heat generating component mounted on a first surface of said substrate;
- and
- at least one heat sink fixed on a second surface of said substrate opposite said first surface, and made of an aluminum-silicon alloy material, said aluminum-silicon alloy material containing silicon in a weight percentage ranging from 30% through 40%.
A heat radiation structure for a semiconductor device, said structure being equipped with a substrate in the form of an envelope for the semiconductor device and an Al-Si alloy layer glued onto said substrate through a junction layer, said Al-Si alloy layer containing 30-60% by weight of Si and functioning as a heat sink.
Dependencies are inferred from the claim text.