Process and composition for drying of gaseous hydrogen halides
AssigneeAdvanced Technology Materials, Inc.
InventorsGlenn M. Tom, Duncan W. Brown
Life of this patent
Estimating the term…
Loading patent…
AssigneeAdvanced Technology Materials, Inc.
InventorsGlenn M. Tom, Duncan W. Brown
Estimating the term…
A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.
A process for drying a gaseous hydrogen halide of the formula HX, wherein X is selected from the group consisting of bromine, chlorine, fluorine, and iodine, to remove water impurity therefrom and produce an essentially completely water-free gaseous hydrogen halide effluent characterized by residual water concentration of below 0.1 part per million by volume, said process comprising the steps of:
Dependencies are inferred from the claim text.