High temperature interconnect system for an integrated circuit
AssigneeFairchild Camera and Instrument Corporation
InventorMichael E. Thomas
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Abstract
A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500.degree. C.
Claims4
A method of inhibiting silicon transport from a doped silicon junction to a refractory metal contact in a semiconductor device by interposing a diffusion barrier layer of material selected from the group consisting of refractory metal nitrides, refractory metal borides and refractory metal carbides, between said doped silicon junction and said refractory metal contact, said method comprising the steps of:
- (a) forming a metal disilicide region in a contact region of said semiconductor device including the steps of:
- (i) depositing a layer of refractory metal into said contact regions;
- and
- (ii) heating said device;
- and
- (b) forming said diffusion barrier layer by converting at least a portion of said metal disilicide region to said barrier layer material including the steps of:
- (i) removing substantially all unreacted refractory metal;
- and
- (ii) heating said device in a gaseous element bearing ambient, said element selected from the group consisting of nitrogen, boron and carbon.
Dependencies are inferred from the claim text.